Abstract
Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.
Highlights
Nitride based quantum dots (QDs) are of particular interest since the emission wavelength may theoretically be controlled over the UV to IR spectrum through variations in the group III alloy content
Previous work by Zhu et al.8 has demonstrated the growth of non-polar a-plane InGaN QDs by the modified droplet epitaxy (MDE) method with exciton lifetimes an order of magnitude smaller than comparable polar QDs,9 and which exhibit improved temperature stability10 and Rabi oscillations
We propose that the temperature ramp leads to desorption of the relaxed structures, which are likely to be more In-rich
Summary
Nitride based QDs are of particular interest since the emission wavelength may theoretically be controlled over the UV to IR spectrum through variations in the group III alloy content. Growth of non-polar [11-20] InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
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