Abstract
The following improvements were made in growing niobium single crystals by pulling from a melt in a pedestal heated by electron beam bombardment: (1) use of single crystalline seed; (2) rotation of the seed crystal as well as the pedestal; and (3) reduction of the pulling rate down to about 0.15 mm/min. The perfection of these crystals were assessed by taking both projection and section topographs under both the “thick crystal case” and the “thin crystal case”. In the former case, diffusion of defect-images, which might overlook the grown-in dislocations, was critically examined. As a result of these measurements, it was established that the niobium crystals are free from any grown-in dislocations. No propagation of dislocations from the seed to the grown crystal was observed.
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