Abstract
200-nm-thick niobium films grown on single-crystal silicon wafers by magnetron sputtering have been oxidized by annealing in flowing oxygen. X-ray diffraction examination revealed the metal-like phase Nb6O in the as-deposited films. Annealing in flowing oxygen for 1 h led to the formation of tetragonal NbO2 at 570 K and hexagonal Nb2O5 at temperatures above 770 K. The grain size and surface roughness of the films were evaluated using atomic force microscopy.
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