Abstract
We report on the growth of epitaxial NbO2 thin films by molecular beam epitaxy on GaN (0001). The combination of these two materials is of interest in resistive switching devices that can operate at high temperature. We show that direct deposition of Nb metal on GaN under an oxygen environment results in a substantial interfacial reaction layer. We perform detailed spectroscopic and structural analyses of the film and interface and describe their implications for the growth of this materials system.
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