Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited using very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) technique at 60 MHz. Films were grown at different power from 5 W to 40 W. The maximum deposition rate was found to be 6.1 A<sup>0</sup>/sec at 20 W power. These films were characterized by XRD which revealed that the size of the Si nanocrystals are in the range of 15.7 to 19.6 A<sup>0</sup>. The optical band gap was found in the range between 1.64 to 1.74 eV.
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