Abstract
Diamond deposition on Ti3SiC2, a newly developed metallic ceramic material, was studied using microwave plasma enhanced chemical vapour deposition (MPCVD) and hot filament chemical vapour deposition (HFCVD) in hydrogen and methane gas mixtures under different conditions. Scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and synchrotron near edge extended X-ray absorption fine structure spectroscopy (NEXAFS) were used to characterize the synthesized films. Results show that high diamond nucleation density has been achieved on Ti3SiC2, thus nanocrystalline diamond (NCD) thin films can be feasibly synthesized on Ti3SiC2 under typical microcrystalline diamond growth conditions.
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