Abstract
Metal atom on the Si(1 1 1)-7 × 7 surface undergoes migration by hopping among Si-adatom and Si-rest atom. If the hopping migration is prohibited, how change the deposited metals? In this paper, we studied the deposition of metals on the Si(1 1 1)-7 × 7 surface saturated with C 2H 5OH, on which the whole Si-rest atoms are changed to Si–H so that the hoping migration of metals will be prohibited. We found the growth of ca. 5 nm of crystalline dots by the deposition of Sn, Zn and Ag. Interestingly, Ag dots undergo layer-by-layer growth so that the surface is covered with 5 nm size dots with uniform height. When the hopping migration is prohibited, growth of dots is controlled by the kinetics of precursor state atoms instead of the lattice energy relating to lattice matching or strain.
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