Growth of multioxide planar film with the nanoscale inner structure via anodizing Al/Ta layers on Si

Abstract

An Al/Ta bilayer specimen prepared by a successive sputter-deposition of a 150-nm tantalum layer and a 180-nm aluminium layer onto a silicon wafer is anodically processed in a sequence of steps in oxalic acid electrolytes, at voltages of up to 53 V, which generates a 260-nm alumina film with well-ordered nanoporous structure. Further potentiodynamic reanodizing the specimen to 220 V causes the simultaneous growth of a 65-nm tantalum oxide layer beneath the alumina film and an array of oxide ‘nanocolumns’ (∼50 mn wide, ∼80 nm apart, ∼7 × 10 9 cm −2 population density) penetrating the alumina pores and reaching precisely to the top of the alumina film. The complete filling of the alumina pores is assisted by the high Pilling–Bedworth ratio for Ta/Ta 2O 5 and a substantially increased transport number for tantalum species (0.4), which is an average value of all migrating tantalum ions with different oxidation states. The nanocolumns are shown to be composed of a unique, regular mixture of Ta 2O 5 (dominating amount), suboxides TaO 2 and TaO x (0.5 < x < 1), Al 2O 3, metallic Ta and Al aggregates, tantalum diboride (TaB 2) and oxidized boron from the electrolyte. The ionic transport processes determining the self-organized growth of these planar oxide nanostructures are considered and described conceptually.