Abstract
Cast multicrystalline silicon (mc-Si) requires high quality at low cost, while fully-melted seed-assisted growth has a reasonable utilization rate but urges better initial grain control. An electrophoretic deposited quartz nucleation layer is introduced to obtain a uniform and oriented nucleation layer. Carrier recombination characterization, including photoluminescence and carrier lifetime mapping, shows that the density of recombination-active structural defects is reduced due to better grain distribution. The average conversion efficiency values of silicon particle, sprayed quartz, and deposited quartz assisted wafers are 20.52%, 20.48%, and 20.68%, respectively Moreover, deposited quartz assisted mc-Si can obtain oriented grains, which offers a potential to apply alkaline texturing on mc-Si wafers.
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