Abstract
In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH3 pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD.
Highlights
In the past several years, much research has been done into the field of two-dimensional (2D)materials due to their unique electronic properties [1,2,3,4,5]
After Ni deposition, substrates were loaded into a close-coupled showerhead metal organic chemical vapor deposition (MOCVD) reactor for the subsequent growth of the hexagonal boron nitride (hBN) thin films
We find the peak position and FWHM to range from 1366 to 1368 cm−1 and 13 to 21 cm−1 comparable with other reports for chemical vapor deposition (CVD) grown hBN
Summary
In the past several years, much research has been done into the field of two-dimensional (2D)materials due to their unique electronic properties [1,2,3,4,5]. The use of Ni(111) as a substrate is especially enticing, as it has an excellent lattice match to hBN and has a stronger interaction with the hBN films than do Cu or Au, which can potentially increase growth rate and quality of films [30]. Another advantage of Ni over other potential metals is its relatively higher melting point reducing thermal grooving and dewetting which has been shown to impact material quality and limit growth temperature is Cu [31]
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