Growth of MnS, Cd1-xMnxSe, and MnS1-xSex Films by Molecular Beam Epitaxy (MBE) and Elemental Vapor Transport Epitaxy (EVTE) Techniques

Abstract

This work addressed the MBE and EVTE growth of wide band gap semiconductor materials such as MnSe, Cd1−xMnxSe, and MnS1−xSex which have potential application for blue-green light emitters. It is the first time that EVTE was applied for high (Se, S, Cd) and low (Mn) vapor pressure materials, which required modification of the conventional design. The films were grown on GaAs 20 off (100) substrates and characterized using optical microscopy, SEM, EDS, X-ray, SIMS, Hall, and sheet resistance measurements. The deposition process parameters will be reviewed and related to results such as film composition, surface morphology, uniformity, and crystallinity. We report on growth of Cd1−xMnxSe with 0.42<X<0.99 and MnS1−xSex with 0.58<X<0.67. Different methods of controling elemental composition will be discussed. Grown materials show good surface morphlogy and uniformity. SIMS analysis demonstrated stable elemental composition throughout the film thickness and a sharp interface with the substrate.