Growth of millimeter-size single-crystal boron phosphide by eutectic melt at 5.0 GPa and 3000 °C

Abstract

Single-crystal boron phosphide (BP), a high-temperature semiconductor, is prepared by a eutectic melting method. Large BP single crystals (>1 mm) are synthesized at high pressure and high temperature (5.0 GPa and 3000 °C). Their growth mechanism is analyzed. Ultraviolet–visible spectroscopy and thermogravimetry/differential thermal analysis show that BP is an indirect semiconductor (2.01 eV) and has excellent thermal stability (>1200 °C). Success in the synthesis of good BP crystals offers a huge opportunity to determine their intrinsic properties and will also stimulate more research on their performance as semiconductors.