Abstract
AbstractIn this study, we report the growth and characterization of M ‐plane InN films on LiAlO2 (100) substrates by radio‐frequency plasma assisted molecular beam epitaxy (RF‐MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M ‐plane InN films were successfully grown at a high temperature of 450 °C and under a slightly In‐rich condition, while the incorporation of C ‐plane phase was observed in M ‐plane InN films grown at low temperatures of less than 400 °C or under a N‐rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M ‐plane InN films. The in‐plane epitaxial relationships of M ‐plane InN on LiAlO2 (100) were [0001]InN // [010]LiAlO2 and [1‐210]InN // [001]LiAlO2. A surface electron accumulation layer on the obtained M ‐plane InN film is also discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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