Abstract
Low resistivity p-type SiC bulk crystals were grown by the sublimation method with using aluminum and nitrogen co-doping. In the sublimation growth of 4H-SiC, to obtain low-resistive p-type crystals are not easy because of the instability of 4H-SiC polytype with highly Al-doping. We have grown < 90 mΩcm p-type 4H-SiC bulk crystals with the co-doping condition. The results of SIMS and Raman spectroscopy show that high concentration of nitrogen co-doping could be effective to the stabilization of 4H polytype with p-type SiC growth.
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