Abstract
We demonstrate low density InP quantum dot growth by metalorganic vapour phase epitaxy on (100) GaAs substrates with a 3 ° misorientation towards ⟨111⟩. Using micro-photoluminescence characterisation, we identify the transitional region from single to bimodal quantum dot size distributions where InP deposition thicknesses, over a range of ≈ 1.1 Å, provide a region of spatially and spectrally isolated quantum dots suitable for single dot studies.
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