Abstract
Boron nanowires (BNWs) are considered as an ideal optoelectronic nanomaterial, but controlling them in identical growth mode and large-area patterns is technically challenging. Here, large-scale BNW patterns with a uniform base-up growth mode are successfully fabricated by choosing Ni film as the catalyst. Moreover, they exhibit low turn-on field (4.3 V/μm) and excellent field emission uniformity (88%).
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