Growth of large-sized relaxor ferroelectric PZN-PT single crystals by modified flux growth method

Abstract

A novel bottom-cooling high-temperature solution growth technique is developed for growing large-sized relaxor ferroelectric 0.91Pb(Zn1/3Nb2/3O3)-0.09PbTiO3 (PZN-PT) single crystals. During the growth, an inverse temperature gradient is maintained in the crucible base by flowing air at a controlled rate. This method restricts the number of spontaneously nucleated crystals at crucible bottom, reduces loss of volatile PbO component and favours the growth of large-sized PZN-PT single crystals. Large-sized PZN-PT single crystals of dimensions ∼ 22 × 20 × 14 mm3 are reproducibly grown by the proposed method. The electrical characteristics of the PZN-PT wafers oriented along the 〈100〉, 〈010〉 and 〈001〉 directions are investigated. PZN-PT wafers oriented along the 〈001〉 direction exhibited superior piezoelectric coefficient (d33) of ∼ 2221 pm/V. The homogeneity of the physical parameters is analysed by preparing 10 elements with dimensions of ∼ 5 × 2.5 × 2.5 mm3 which were cut from single wafer oriented along the 〈001〉 direction. The ferro-, piezo- and dielectric characteristics of these wafers were found to be highly uniform with small standard deviation. The observation of d33 value with less than 2 % deviation from mean value confirms the growth of highly quality PZN-PT single crystals.