Abstract
The growth of InPBi by molecular beam epitaxy on an InP(311)B substrate is investigated. Bi atoms are incorporated into the samples grown at or below 350 °C. A Bi concentration of up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements. Although the surface roughness increased with decreasing growth temperature and at a high Bi flux, Bi atoms are found to have surfactant effects on the surface flatness of the samples grown at a low Bi flux.
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