Abstract
Abstract Undoped InP single crystals were grown by the horizontal gradient freeze technique with 〈100〉 seed orientation. Growth was performed inside thick-walled silica ampoules positioned in a gradient furnace without a pressure vessel. Boats made of SiO 2 and pyrolytic BN were used. The stoichiometry of the melt was controlled by a separately heated source of red phosphorus. The properties of the crystals were analysed by Hall effect 3easurements and by chemical etching to reveal dislocation densities (EPD).
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