Growth of InGaN layer on GaN templated Al 2 O 3 (0001) and Si (111) substrates by mixed‐source HVPE

Abstract

The InGaN layers on GaN templated sapphire (0001) and Si (111) substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) method. As a new attempt in obtaining an InGaN layers, the growth of the thick InGaN layer is performed by putting small amount of Ga into the In source. The InGaN layer is compounded from chemical reaction between a NH3 and an Indium-gallium chloride formed by HCl flown over metallic In mixed with Ga. The InGaN layer is analyzed by X-ray photoelectron spectroscopy (XPS) to characterize the InGaN ternary crystal alloy. The optical property of the selective area growth (SAG) of the InGaN layer is investigated by the photoluminescence (PL) spectrum and the cathodoluminescence (CL) images. Indium compositions are estimated to be in the range 3-10%. In order to obtain the GaN layer on GaN templated Si (111) substrates, an InGaN layer is used as an intermediate layer. The PL and CL of the InGaN intermediate layer are measured at 300K. We find that the InGaN intermediate layer is possible to be one of the growth methods of thick GaN layer on Si substrates by HVPE method. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)