Abstract
Growth of InP and InGaAsP using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) with a showerhead stagnation flow vertical reactor is reported for the first time. In a close-spaced showerhead design with an inlet-susceptor spacing of 1–2 cm, thermal decomposition of TBP and TBA and subsequent coating on the showerhead may affect the reproducibility. This can be prevented by keeping the total flow rate above the minimum value depending on the spacing. The group III element incorporation is controlled by the momentum boundary-layer thickness. The group V composition and Si doping by disilane are controlled by the gas sweep speed which determines precursor decomposition, while Zn doping by diethylzinc is controlled by its partial vapor pressure. While taking a full advantage of the uniformity, most of the growth condition changes caused by the total flow rate or the reactor pressure are quantitatively explained because the gas flow pattern is determined almost exclusively by reactor geometry.
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