Abstract
Molecular-beam epitaxy (MBE) has been employed for the growth of quantum-well laser structures grown on GaSb substrates. These lasers consist of compressively strained InAsSb wells, tensile-strained InAlAsSb barriers, and lattice-matched AlAsSb cladding layers. A broad-stripe diode laser with an emission wavelength of 3.9 μm has operated cw up to 123 K, with a characteristic temperature T0 of 30 K. Optical pumping of this laser structure has provided pulsed operation up to 162 K, with a peak output power of up to ∼0.6 W at 110 K. Emission wavelengths as long as 4.5 μm have been obtained in other laser structures with InAlAs barriers. In this article we present the key issues regarding the MBE growth of long-wavelength strained quantum-well lasers on GaSb, including shutter sequencing for interface control, analysis of characterization data, and laser results, with a comparison to double-heterostructure devices.
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