Growth of InAs nanowires with the morphology and crystal structure controlled by carrier gas flow rate

Abstract

We report on the growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H2 carrier gas flow rate in a CVD furnace and show that highly selected growth of twin superlattice nanowires are achieved at high carrier gas flow rates. Our work provides a new route to grow and phase-engineer single crystal InAs nanowires for a wide range of potential applications.