Abstract
In situ radio-frequency (RF) magnetron cosputtering was used to prepare InAs nanocrystals embedded in SiO 2 matrices. The growth behavior of InAs in the composite films has been studied systematically for the first time by transmission electron microscopy. It is found that with increasing substrate temperature, InAs in the matrix undergoes a series of transitions from an initial dispersed phase to a fractal structure, then to nucleation, and finally to grain growth. The average size and the size distribution of the InAs nanocrystals as a function of the RF sputtering parameters were presented and discussed with respect to the crystal growth dynamics. Optical absorption spectra analysis shows that size-controllable InAs nanocrystals embedded in SiO 2 films with a narrow size distribution have been obtained. The blue shift of optical absorption edge versus the average size has been explained by the effective-mass approximation method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
