Abstract
Low-temperature mobilities in InAs-AlSb quantum wells depend sensitively on the buffer layer structures. Reflection high energy electron diffraction and x-ray diffraction show that the highest crystalline quality and best InAs transport properties are obtained by a buffer layer sequence GaAs → AlAs → AlSb → GaSb, with a final GaSb layer thickness of at least 1 μm. Using the improved buffer scheme, mobilities exceeding 600,000 cm2/Vs at 10 K are routinely obtained. Modulation δ-doping with tellurium has yielded electron sheet concentrations up to 8 × 1012 cm−2 while maintaining mobilities approaching 100,000 cm2/Vs at low temperatures.
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