Abstract
In this study, 2D layers of β-In2S3 have been synthesized on different substrates such as SiO2, F-Mica, ZnO, and TiO2 using the chemical vapor deposition (CVD) technique. Different morphologies of In2S3 2D nanoflakes have been obtained within the temperature range of 550–850 °C. These nanolayers have been characterized by using FESEM, XRD, and Raman spectroscopy techniques. The results show well-formed nanodomains of β-In2S3 with a tetragonal phase on different substrates by CVD technique at an optimized temperature of 750 °C, although the morphology of the grown layer depending sensitively upon the substrates. The initial results show ohmic current-voltage characteristics, the fast photoconductive response of In2S3 layers. In2S3 grown on ZnO substrates as a base layer show enhanced photoelectrochemical properties because of increased visible light absorption, as indicated by optical absorption results.
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