Abstract
AbstractWe investigated the properties of indium‐doped zinc oxide layers grown by metalorganic chemical vapor deposition on semi‐insulating GaN(0001) templates. Specular and transparent films with n‐type carrier concentrations up to 1.82 × 1019 cm–3, as determined by hall measurements, were grown. An undoped film grown under the same conditions had carrier concentration 5.4 × 1017 cm–3. An interesting trend was observed for carrier concentration dependence on In precursor flow. For low In flows, carrier concentration increased with TMI flow until a peak was reached for a TMI flow of 5 standard cubic centimetres per minute. Beyond this flow, carrier concentration decreased with increasing TMI flow rate. A sheet resistance as low as 185 ohm/sq was achieved for the indium‐doped films, which is a significant decrease from the undoped ZnO film which had a sheet resistance of 3100 ohm/sq. The results of this In doping study show that In is an effective dopant for controlling the n‐type conductivity of ZnO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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