Growth of III-V semiconductor crystals under microgravity

Abstract

The low-gravity environment aboard the space provides a unique platform for both understanding the crystal-growth-related phenomena that are masked by gravity on the earth and exploring new crystal growth techniques. III-V semiconductor crystal growths were carried out under microgravity and the main results include: device-grade semi-insulating GaAs single crystal with improved stoichiometry was grown under microgravity condition, and low noise field-effect transistors and analog switch integrated circuits were fabricated and the performances were better than their terrestrial counterparts; detached Bridgman growth was realized in two model systems of GaSb and InSb by suppressing the hydrostatic pressure of melt, and largely reduced dislocation densities in the materials were observed; the contributions of buoyancy-driven convection, Marangoni convection and rotation magnetic field forced convection on the microscopic segregation were carefully studied; the vertical gradient freezing method was employed to grow semiconductor alloys and chemically homogeneous GaInSb crystal was obtained. In this review, the main progresses in these aspects are summarized and the future challenges are discussed.