Abstract
We report on the growth of high quality aluminum nitride (AlN) and gallium nitride (GaN) epilayers on large area (6in. diameter) silicon (111) substrates by metal organic chemical vapor deposition. We have demonstrated the feasibility of growing crack-free high quality III-nitride photonic structures and devices on 6inch Si substrates through the fabrication of blue light emitting diodes based upon nitride multiple quantum wells with high performance. The demonstration further enhances the prospects for achieving photonic integrated circuits based upon nitride-on-Si material system.
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