Abstract
Horizontally aligned, dense carbon nanotubes (HADCNTs) in the form of CNTcantilevers/bridges were grown from selected trench sidewalls in silicon substrate bychemical vapor deposition (CVD). The as-grown CNT cantilevers/bridges are packedwith multiwalled carbon nanotubes (MWCNTs) with a linear density of about10 CNTs µm − 1. The excellent horizontal alignment of these CNTs is mainly ascribed to the van der Waalsinteractions within the dense CNT bundles. What is more, the Raman intensity ratioIG/ID shows a gradual increase from the CNT roots to tips, indicating a defect gradient alongCNTs generated during their growth. These results will inspire further efforts to explorethe fundamentals and applications of HADCNTs.
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