Abstract
Compositionally uniform mixed crystals of InxGa1−xAs (0.07<x<0.35) and Si0.5Ge0.5 were grown by the traveling liquidus-zone (TLZ) method. The TLZ method is a kind of zone-melting method but is different from a conventional method in forming a liquidus-zone at a relatively low temperature gradient of about 10°C/cm. In the paper, the principle of the TLZ method, examples of TLZ-grown crystals and merits and demerits of the TLZ method are described. Finally, application of the TLZ-grown In0.13Ga0.87As crystals to substrates and successful fabrication of high performance laser diodes are introduced.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
