Abstract
Compositionally uniform mixed crystals of InxGa1−xAs (0.07<x<0.35) and Si0.5Ge0.5 were grown by the traveling liquidus-zone (TLZ) method. The TLZ method is a kind of zone-melting method but is different from a conventional method in forming a liquidus-zone at a relatively low temperature gradient of about 10°C/cm. In the paper, the principle of the TLZ method, examples of TLZ-grown crystals and merits and demerits of the TLZ method are described. Finally, application of the TLZ-grown In0.13Ga0.87As crystals to substrates and successful fabrication of high performance laser diodes are introduced.
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