Abstract
AbstractOn the basis of micro‐ and macro‐morphological studies the mechanism responsible for the growth of Se–Te whiskers has been suggested. It has been shown that Sc–Te whiskers grow by layer growth mechanism in which screw dislocation is not the source of step but the growth proceeds by two‐dimensional nucleation. This has been supported by the supersaturation data. The plausible mechanism for the growth of hollow whiskers has also been suggested.
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