Abstract
CdTe and (Cd,Zn)Te high resistivity crystals were grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. Different dopants had been applied to obtain resistivities of 5 x 10<sup>8</sup> Ωcm up to 2 x 10<sup>10</sup> Ωcm and 3 x 10<sup>-3</sup> cm<sup>2</sup>/V for the mobility-lifetime product for electrons for the indium doped material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
