Abstract
We report on size, shape, and position-controlled growth of high-density InAs nanowire array on InAs (1 1 1)B substrates by selective-area metalorganic vapor phase epitaxy (SA-MOVPE). In the optimized growth condition, uniform array of vertically aligned nanowires were formed. Growth carried under different growth temperatures, T G, indicated that the lateral growth along the 〈 1 ¯ 1 0 〉 directions was suppressed for T G⩾540 °C to uniform array of thin InAs nanowires. This behavior is thought to be due to decreased number of bonds available for binding In atoms at step sites via desorption of As adatoms as growth temperature increased. Average height of the InAs nanowires found to depend significantly on the diameter of nanowires.
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