Abstract
Ferroelectric LiNbO3 thin film of high near-c-axis orientation was grown on Si by pulsed laser deposition using a thin ZnO buffer layer of high c-axis orientation. Both the LiNbO3 film and the ZnO layer consist of columnar grains with random in-plane twist relative to each other. The c axes of LiNbO3 grains tilt small angles with respect to the film growth direction and the deviation angles follow nearly Gaussian probability distribution within 5°. The out-of-plane tilt nucleation of LiNbO3 lattices on the waved surfaces of the ZnO layer leads to the near-c-axis oriented growth of the LiNbO3 film.
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