Abstract
High quality and highly conductive n-type Al0.7Ga0.3N films are obtained by using AlN multi-step layers (MSL) with periodical variation of V/III ratios by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). The full-width at half-maximum (FWHM) of (0002) and (1015) rocking curves of the Si-doped Al0.7Ga0.3N layer are 519 and 625 arcsec, respectively. Room temperature (RT) Hall measurement shows a free electron concentration of 2.9 × 1019 cm−3, and mobility of 17.8 cm2V−1s−1, corresponding to a resistivity of 0.0121 ω cm. High conductivity of the Si-doped AlGaN film with such high Al mole fraction is mainly contributed by a remarkable reduction of threading dislocations (TDs) in AlGaN layer. The TD reducing mechanism in AlN MSL growth with periodical variation of V/III ratio is discussed in detail.
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