Growth of high-In-content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma-assisted molecular-beam epitaxy

Abstract

Self-organized In x Ga 1-x N nanocolumns with high-In-contents of x=0.86-1.0 and In 0.86 Ga 0.14 N/ In 0.79 Ga 0.21 N multiple quantum disk (MQD) nanocolumns were successfully grown on Si(111) substrates by rf plasma-assisted molecular beam epitaxy. The In x Ga 1-x N nanocolumns showed room-temperature photoluminescence (RT-PL) emission and the emission peak wavelength varied from 1500 to 1920 run with increasing In content from 0.86 to 1.0. The In 0.86 Ga 0.14 N/In 0.79 Ga 0.21 N MQD nanocolumns showed a satellite peak in X-ray diffraction spectra that indicates the growth of a good periodic structure. RT-PL emission was also observed and the emission peak wavelength shifted from 1450 to 1620 nm with changing In 0.86 Ga 0.14 N well layer thickness from 1.5 to 3.0 nm.