Abstract
The Czochralski crystal growth of 30at% Yb:YAG was reported. The growth parameters and annealing conditions were studied and the defects in Yb:YAG crystal were also investigated. The uniformity of 30at% Yb:YAG was characterized using the absorption coefficient of Yb:YAG at 940nm, and the laser performance of 30at% Yb:YAG thin chip was demonstrated as well. The results show that Yb:YAG crystals with high doping level are potential candidates for compact, efficient thin chip lasers.
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