Abstract
InN with a film thickness of 600 nm was grown on a (0 0 0 1) sapphire substrate using low-temperature-grown intermediate layers by radio frequency plasma-excited molecular beam epitaxy (RF-MBE). From SEM observation, it was found that InN films with uniform surface morphology were grown. The electron mobility at room temperature obtained in this study was 830 cm 2 /V s and the corresponding carrier density was 1.0×10 19 cm −3. To our knowledge, this electron mobility is the highest value ever reported for single-crystal InN films.
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