Abstract
The epitaxial quality of non-selective and selective deposition of Si 1− x− y Ge x C y (0≤ x≤0.30, 0≤ y≤0.02) layers has been optimized by using high-resolution reciprocal lattice mapping (HRRLM). The main goal was to incorporate a high amount of substitutional carbon atoms in Si or Si 1− x Ge x matrix without creating defects. The carbon incorporation behavior was explained by chemical and kinetic effects of the reactant gases during epitaxial process. Although high quality epitaxial Si 1− y C y layers can be deposited, lower electron mobility compared to Si layers was observed.
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