Abstract
The growth of InSb nanowires on an InSb(1 1 1) substrate in a closed system is described. A high density InSb nanowires was grown by the use of InSb substrates in a torch sealed quartz tube at a temperature of 400 °C, using a 60 nm size gold colloid catalyst. The typical diameter of the InSb nanowires was 80–200 nm and they consisted of nearly equal atomic percent of In and Sb. Transmission electron microscopy showed the wires to be single crystal, with a growth direction of 〈1 1 0〉.
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