Abstract
A buried hexagonal YSi 1.7 layer is formed by channelled implantation of Y ions into (1 1 1) oriented silicon wafers. The orientation relationship between the epitaxial YSi 1.7 and the silicon is (0 0 0 1) YSi 1.7 ‖(1 1 1) Si with 〈1 1 2 ̄ 0〉 YSi 1.7 ‖〈1 1 ̄ 0〉 Si . Annealing at 600°C for 1 h and subsequently at 1000°C for 0.5 h improves the crystalline quality of the buried YSi 1.7 layer. On the other hand, Nd-disilicide cannot be grown epitaxially on a Si(1 1 1) substrate. However, by using a sequential implantation of Y and Nd ions, a buried hexagonal Nd 0.32Y 0.68Si 1.7 layer with good crystalline quality is formed in the Si(1 1 1) substrate.
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