Growth of high quality BiSrCaCuO single crystals by the self-flux method with a temperature-holding process

Abstract

We prepared the BiSrCaCuO(Bi-based) single crystals by the self-flux method with a temperature-holding process. The plate-like Bi-based single crystals with the size of about 2 x 2mm 2 were prepared at the holding temperature of 840°C. From the X-ray diffraction patterns, we found that the c-axis unit cell length of the crystal ( C 0=39 A ̊ ) was longer than that of an 80K phase Bi-based single crystal.