Abstract
Abstract1‐inch diameter AlN single crystals with the thickness of 0.025–2 mm were grown on SiC substrates by the sublimation method. Crystalline qualities were evaluated by X‐ray diffraction and EPD measurements. The FWHM of X‐ray rocking curve for (0002) reflection was 281 arcsec with 1.2‐mm thick crystal and dislocation density measured by EPD was 1.6×106/cm2 with 0.8‐mm thick crystal. These results were well consistent with the dependence of those properties on the thickness of the crystal, which was found in our previous work on 10‐mm diameter crystals. According to this dependence, growing the thick AlN crystal on SiC substrates by the sublimation method is expected to lead to high‐quality free‐standing 1‐inch AlN substrates. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
