Abstract
We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.
Highlights
Among various III–V semiconductors, group IIIantimonides, e.g., InSb and GaSb, show various attractive properties, such as high carrier mobilities, narrow band gaps, small carrier effective masses, and large g factors
We note that such highresolution TEM (HRTEM) and energydispersive X-ray spectroscopy (EDX) analyses have been carried out for more than 20 InSb nanowires grown in this process and all these nanowires are found to show the same structural properties
We show that growth of the nanowires with several micrometers in length can be achieved during natural cooling after a stable heating at a high temperature
Summary
Among various III–V semiconductors, group IIIantimonides, e.g., InSb and GaSb, show various attractive properties, such as high carrier mobilities, narrow band gaps, small carrier effective masses, and large g factors These properties make the group III-antimonide nanowires the ideal material systems for applications in high-speed electronics, infrared optoelectronics, and quantum devices [1,2,3,4,5,6,7]. Ambipolar behavior is a typical characteristic of a field effect transistor (FET) made with a narrow band gap semiconductor Such an ambipolar performance has been rarely observed in FETs made from these CVD-grown nanowires [1, 20], which cast a severe doubt in using these nanowires for device applications.
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