Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method

Abstract

Hexagonal aluminium nitride (AIN) microrods with high crystalline quality were grown by physical vapor transport (PVT) method at low growth temperature between 1700 and 1850 degrees C. The length of as-grown microrod is around 1 cm, and the width between 200-400 mu m. The microrod exhibits typical hexagonal geometrical shape with pale yellow color under optical microscopy. Scanning electron microscope (SEM) and atomic force microscope (AFM) images show each microrod with closely arranged step waviness, of which the step interval is 2-4 mu m and the height several nanometers. Raman spectrum characterization showed characteristic peaks of high crystalline AlN. The rod-like structure is attributed to slow growth velocity at lower crystalline temperature, enabling Al and N atoms having enough time to move to the lower energy site and to form heiagonal microrod along direction. High quality hexagonal AlN microrod is an enrichment to one-dimensional semiconductor materials. Data from this study suggest that, by further study on size and impurity control, high performance miniaturized opto-electronic device is hopeful to be achieved.