Abstract
A single crystal of Gd2.88Sc1.89Al3.23O12:Ce (GSAG:Ce) garnet scintillator was grown by the crucible-free floating zone method in an advanced optical furnace with laser heaters equipped with a Pt/Rh passive afterheater. The effect of the growth process under pure oxygen accessible exclusively in the floating zone method was studied. Reported results show the potential of utilization of the (laser-diode) floating zone method for the preparation of oxide-based scintillators with high melting temperatures without costly crucibles. An unprecedented usage of oxygen overpressure is demonstrated, which results in partial stabilization of the cerium center in the tetravalent state.
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