Growth of Graphene-Like Structures on an Oxidized SiC Surface

Abstract

Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO2/SiC structure was annealed at 1350°C in 10−5 Torr; the SiO2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10−5 Torr.