Abstract
AbstractSiGe/Si superlattices were grown using limited reaction processing in a chamber which allows both W-halogen and Hg arc wafer illumination. Each multilayer structure was fabricated in-situ by changing the gas composition between high temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy,and Rutherford backscattering. Preliminary results are presented on UV/ozone cleaning of LRP substrates to remove residual carbon contamination in-situ prior to film deposition.
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